Preparation of semiconductor memory device

  • Inventors:
  • Assignees: Fujitsu Ltd
  • Publication Date: July 04, 1980
  • Publication Number: JP-S5588370-A


PURPOSE:To write information in easy processes by introducing impurities selectively over parts which form source regions and drain regions and forming cells selectively which lack one or both of those regions. CONSTITUTION:A semiconductor memory device is formed of word lines W1, W2... consisting of silicon gate electrodes, bit lines B1, B2... consisting of aluminium drain electrodes, source regions S, drain regions D and electrode contact windows CT. When forming the source regions S and the drain regions D, impurities are injected with masks shown with broken lines in figure (a) to write information without forming one or both of the source region S and the drain region D selectively. A dropped region S' has a form shown with a broken line in figure (b).




Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)


Cited By (2)

    Publication numberPublication dateAssigneeTitle
    EP-0600437-A2June 08, 1994Texas Instruments IncorporatedDurch Gate definierter Transistor
    EP-0600437-A3September 21, 1994Texas Instruments IncGate defined transistor.